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PECVD plasma enhanced chemical vapor deposition technologyPECVD plasma enhanced chemical vapor deposition technologyPECVD plasma enhanced chemical vapor deposition technology

PECVD plasma enhanced chemical vapor deposition technology

     chemical vapor deposition adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature.

 chemical vapor deposition adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature.

It is suitable for depositing thin films of silicon nitride, amorphous silicon and microcrystalline silicon on different substrates such as optical glass, silicon, quartz and stainless steel. It has good film-forming quality, less pinholes and is not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices. It can be widely used in the scientific research and small batch preparation of thin film materials in Colleges and universities and scientific research institutes.

Technical parameter:

RF   power supply

Signal   frequency

13.56MHz

Power output range

0~500W

Maximum  reflected power

100W

Reflected power
 (at maximum power)

<5W

Power  stability

±0.1%

Working   Chamber

Heating   temperature

RT-1000℃

Temperature control accuracy

±1℃

Sample   holder

Φ200mm

Rotating speed of sample
holder

1-20rpm   adjustable

Spray  head size

Φ90mm

Distance

The   distance between the spray head and the sample is 40-100mm continuously   adjustable

Working vacuum for
 deposition

0.   133- 133Pa (can be adjusted according to the technical process)

Flange  

The   top flange can be lifted by the motor, the substrate is easy to change, and   there is a visual window

Chamber

Stainless   steel material, Φ500mm * 500mm

Observation window

Φ100mm,   with baffle

Gas   supply

system

Channel  numbers

6

Measuring  unit

Mass   flow controller

Measuring  range

A   channel: 0200SCCM for H2  

Remarks:   If other ranges are required, please specify when ordering. According to the   customer's specific requirements, the flow meter of corresponding gas type   and range is optional.

B   channel: 0200SCCM for CH4

C   channel: 0200SCCM for C2H4

C   channel: 0500SCCM for N2

D   channel: 0500SCCM for NH3

E   channel: 0500SCCM for Ar

Measurement accuracy

±1.5%F.S

Working pressure difference

-0.15Mpa~0.15Mpa

Connecting   pipe

304   stainless steel

Gas  channel

304   stainless steel needle valve

Interface specification

1/4"   ferrule connector for gas inlet and outlet

Vacuum   system

Backing   pump

4.7L/s

Molecular   pump

1200L/s

Vacuum  measurement

Compound   vacuum gauge, range 10-5Pa ~ 105Pa

Vacuum   degree

5.0*10-3Pa

Water   chiller

Cooling water temperature

37

Water   flow

10L/min

Power

0.1KW

Cooling   power

50W/℃

Power   supply

AC220V   50Hz

 

Contact Us
  • E-mail: cysi@cysi.wang
  • Tel: +86 371 5519 9322
  • Fax: +86 371 8603 6875
  • Add: No. 820, 8th Floor, 1st Unit, 9th Block, Cuizhu Street, High-Tech Zone, Zhengzhou, Henan, China




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