PECVD Plasma Enhanced Chemical Vapor Deposition

PECVD Plasma Enhanced Chemical Vapor Deposition

Inquire Now Next Product

chemical vapor deposition using plasma enhanced chemical vapor deposition technology, low basic temperature, fast deposition rate, deposition of silicon nitride, amorphous silicon and microcrystalline silicon films on optical glass, silicon, quartz, stainless steel and other substrate materials, good film forming quality, fewer pinholes, not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices, and can be widely used in the research and small batch preparation of thin film materials in colleges and universities and scientific research institutes.

Main functions and characteristics

PECVD equipment uses the principle of flat plate capacitive glow discharge to dissociate the process gas passing into the deposition chamber and generate plasma. The dissociated groups re-react chemically in the plasma. Due to the presence of plasma, the decomposition, combination, excitation and ionization of gas molecules are promoted, and the formation of reactive groups is promoted, thus reducing the deposition temperature. A film is deposited on a substrate at a certain temperature. The density and energy of the plasma can be adjusted according to the process, and the growth rate and microstructure of the film can be controlled.

Product parameters:

Product model	CY-PECVD-240 chemical vapor deposition equipment
Installation condition	The equipment is required to be used at an altitude of less than 1000m, at a temperature of 25 ° C ±15 ° C, and at a humidity of 55%Rh±10%Rh. 1, water: The equipment is equipped with self-circulating cooling machine (filled with pure water or deionized water) 2, electricity: AC220V 50Hz, must have good grounding 3. Gas: Nitrogen/argon (purity above 99.99%) should be filled in the equipment chamber, and the gas cylinder required for the experiment should be prepared by itself (with Ø10mm double sleeve joint) and pressure reducing valve 4, ventilation device: required
Main feature	1. Low film forming temperature required 2. Fast deposition rate and wide application 3. Small size, easy to operate 4. Easy to control using radio frequency as the enhancement source 5. Easy to clean and install. 6. Integrated touch screen control
Radio frequency power supply	Signal frequency: 13.56MHz±0.005% Power output: 0~500W Reflected power: <3W (maximum power) Power stability: ±0.1%
Vacuum chamber	The capacitive coupling mode is adopted with the sample table at the bottom and the gas supply nozzle at the top. Sample heating: RT-1000℃ above, temperature control accuracy: ±1°C Sample speed: adjustable speed: 1-20rpm adjustable Spray head: Φ100mm spacing 40-100mm online continuous adjustable Sample stand: Diameter 100mm Vacuum chamber: front door type, φ245mm X 300mm stainless steel Observation window: φ100mm with baffle
Gas supply system	Measuring range Channel A: 0 ~ 200SCCM, Ar gas Channel B: 0 to 200SCCM, O2 gas Channel C: 0 ~ 200SCCM, N2 gas Liquid source: Argon or nitrogen Connector specification :6.35mm sleeve connector
Vacuum system	Port Type Suction port: KF40；Exhaust port: G1" Exhaust velocity Nitrogen: 60L/S Nitrogen with protective net: 55L/S Bearing type: Ceramic bearing, grease lubricated Cooling method: forced air cooling Speed: 69000rpm Startup time: 1.5 to 2 minutes Stop time: 15 to 25 minutes Compression ratio N2:2x 107 Compression ratio H2:3x 103 Max. allowable back pressure: 800Pa Bearing life: 20000 hours Molecular pump controller: TC75 Auxiliary pump type: two-stage rotary vane vacuum pump Exhaust speed: 160L/min
Deposition studio	0.133-40Pa(Can be adjusted according to the process)
Vacuum gauge	Combined vacuum gauge
Water cooler	Water flow rate: 10L/min；Power: 0.1Kw Cooling water temperature: <37℃
Warranty period	The standard warranty period is 1 year