Home > Products > CVD System
PECVD Chemical Vapor Deposition SystemPECVD Chemical Vapor Deposition SystemPECVD Chemical Vapor Deposition SystemPECVD Chemical Vapor Deposition System

PECVD Chemical Vapor Deposition System

    The PECVD chemical vapor deposition system uses plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process

The PECVD chemical vapor deposition system uses plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed, and reduce the reaction temperature. It is suitable for depositing thin films such as silicon nitride, amorphous silicon and microcrystalline silicon on different substrate materials such as optical glass, silicon, quartz and stainless steel. The film quality is good, with fewer pinholes and not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices. It can be widely used in the scientific research and small-batch preparation of thin film materials in colleges and universities and scientific research institutes.

PECVD chemical vapor deposition system technical parameters:

Product name

PECVD Chemical Vapor Deposition System

Product model

CY-PECVD-500T-SS

Power supply

AC220V 50Hz

RF Power

Signal frequency

13.56MHz

Power output range

0~300W

Maximum reflected power

100W

Reflected power (at maximum power)

<5W

Power stability

±0.1%

Working chamber

Heating temperature

RT-400℃

Temperature control accuracy

±1℃

Sample stage size

Φ200mm

Sample stage speed

1-20rpm adjustable

Nozzle size

Φ200mm

Distance

The distance between the nozzle and the   sample is 40-100mm continuously adjustable

Deposition working vacuum

0. 133- 133Pa (adjustable according to   the process)

Flange

The upper cover design makes the   substrate easy to replace and has a visual window

Cavity

Stainless steel material, Φ500mm * 500mm

Observation window

Φ40mm

Gas supply system

Number of channels

Customized

Measurement unit

Mass flow meter

Measuring range

A channel: 0~200SCCM   for H2

B channel: 0~200SCCM   for CH4

C channel: 0~200SCCM   for C2H4

D channel: 0~500SCCM   for N2

E channel: 0~500SCCM   for NH3

F channel: 0~500SCCM   for Ar

Measurement accuracy

±1.5%F.S

Working pressure difference

-0.15Mpa~0.15Mpa

Connecting pipe material

304 stainless steel

Gas path

304 stainless steel needle valve

Inlet and outlet interface specifications

1/4" ferrule fitting

Vacuum system

Pre-stage pump pumping speed

4.7L/s

Molecular pump pumping speed

60L/s

Vacuum measurement

Compound vacuum gauge, range 10-5Pa ~   105Pa

Vacuum degree

5.0*10-3Pa

Water Cooler

Cooling water temperature

≦37℃

Water flow rate

10L/min

Power

0.1KW

Cooling power

50W/℃

Air compressor

OTS-550


Product size

1362*736*1434

Product weight

280公斤


Contact Us
  • E-mail: cysi@cysi.wang
  • Tel: +86 371 5519 9322
  • Fax: +86 371 8603 6875
  • Add: No. 820, 8th Floor, 1st Unit, 9th Block, Cuizhu Street, High-Tech Zone, Zhengzhou, Henan, China




Follow Us

Copyright © Zhengzhou CY Scientific Instrument Co., Ltd. All Rights Reserved    Update cookies preferences

| Sitemap |       Technical Support: