The PECVD chemical vapor deposition system uses plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process
The PECVD chemical vapor deposition system uses plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed, and reduce the reaction temperature. It is suitable for depositing thin films such as silicon nitride, amorphous silicon and microcrystalline silicon on different substrate materials such as optical glass, silicon, quartz and stainless steel. The film quality is good, with fewer pinholes and not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices. It can be widely used in the scientific research and small-batch preparation of thin film materials in colleges and universities and scientific research institutes.
PECVD chemical vapor deposition system technical parameters:
Product name | PECVD Chemical Vapor Deposition System | |
Product model | CY-PECVD-500T-SS | |
Power supply | AC220V 50Hz | |
RF Power | Signal frequency | 13.56MHz |
Power output range | 0~300W | |
Maximum reflected power | 100W | |
Reflected power (at maximum power) | <5W | |
Power stability | ±0.1% | |
Working chamber | Heating temperature | RT-400℃ |
Temperature control accuracy | ±1℃ | |
Sample stage size | Φ200mm | |
Sample stage speed | 1-20rpm adjustable | |
Nozzle size | Φ200mm | |
Distance | The distance between the nozzle and the sample is 40-100mm continuously adjustable | |
Deposition working vacuum | 0. 133- 133Pa (adjustable according to the process) | |
Flange | The upper cover design makes the substrate easy to replace and has a visual window | |
Cavity | Stainless steel material, Φ500mm * 500mm | |
Observation window | Φ40mm | |
Gas supply system | Number of channels | Customized |
Measurement unit | Mass flow meter | |
Measuring range | A channel: 0~200SCCM for H2 | |
B channel: 0~200SCCM for CH4 | ||
C channel: 0~200SCCM for C2H4 | ||
D channel: 0~500SCCM for N2 | ||
E channel: 0~500SCCM for NH3 | ||
F channel: 0~500SCCM for Ar | ||
Measurement accuracy | ±1.5%F.S | |
Working pressure difference | -0.15Mpa~0.15Mpa | |
Connecting pipe material | 304 stainless steel | |
Gas path | 304 stainless steel needle valve | |
Inlet and outlet interface specifications | 1/4" ferrule fitting | |
Vacuum system | Pre-stage pump pumping speed | 4.7L/s |
Molecular pump pumping speed | 60L/s | |
Vacuum measurement | Compound vacuum gauge, range 10-5Pa ~ 105Pa | |
Vacuum degree | 5.0*10-3Pa | |
Water Cooler | Cooling water temperature | ≦37℃ |
Water flow rate | 10L/min | |
Power | 0.1KW | |
Cooling power | 50W/℃ | |
Air compressor | OTS-550 | |
Product size | 1362*736*1434 | |
Product weight | 280公斤 |
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