CY-PECVD-450 film coating machine adopts plasma enhanced chemical vapor deposition technology, which can use high-energy plasma to promote the reaction process, effectively increase the reaction speed and reduce the reaction temperature.
It is suitable for depositing thin films of silicon nitride, amorphous silicon and microcrystalline silicon on different substrates such as optical glass, silicon, quartz and stainless steel. It has good film-forming quality, less pinholes and is not easy to crack. It is suitable for the preparation of amorphous silicon and microcrystalline silicon thin film solar cell devices. It can be widely used in the scientific research and small batch preparation of thin film materials in Colleges and universities and scientific research institutes.
Technical parameter of PECVD film coating equipment:
Model | CY-PECVD-450 |
Vacuum chamber | front opening door, φ300mm x 300mm, stainless steel viewing window: φ100mm with baffle |
Vacuum pump set | Backing pump: rotary vane pump pumping speed: 1.1L/s Secondary pump: Turbo molecular pump pumping speed: 600L/s |
Ultimate vacuum | 1.0E-6Pa 1.0E-4Pa (Within 30 minutes) |
Vacuum (deposition) | 0.133~133Pa, adjusted according to the process |
RF power | 13.56MHz, 500W (automatch) |
Flow control | Mass flowmeter（default Ar,0~200sccm） |
Dimensions | 1100mm x 800mm x1100mm |
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