Single chamber magnetron sputtering system is mainly composed of sputtering vacuum chamber, magnetron sputtering target, substrate water-cooled heating platform, working gas path, air extraction system, vacuum measurement, electronic control system and installation machine.
Single chamber magnetron sputtering system is used for the preparation of novel thin film materials such as nanometer single-layer and multi-layer functional film, hard film, metal film, semiconductor film and dielectric film. It can be widely used in the research of thin film materials and the production of small batch. It can be widely used in universities and colleges, scientific research institutes of thin film materials preparation research and small batch.
Circular type vacuum chamber,
Vacuum system configuration
Compound molecular pump, mechanical pump, gate valve
≦6.67*10-5Pa(After baking degassing)
Vacuum recovery time
Up to 6. 6*10-4Pa in 40 minutes. (the system briefly exposes the atmosphere and fills with dry nitrogen to start pumping)
Magnetron target component
3 sets of permanent magnetic targets; target sizeØ60mm(one of the targets can sputtering ferromagnetic material). The RF beach and DC cutoff of each target are compatible; and the distance between target and sample is adjustable from 90mm to 100mm; when direct upward sputtering, the distance between target and samle is adjustable from 40mm to 80mm.
Water-cooling Substrate Heating Revolution Table
The substrate heating and water cooling work independently, and the heating furnace can be replaced by water cooling substrates
Mode of motion
The substrate can rotate continuously, and the rotation speed is 5-10 RPM
Max. Temperature 600℃±1℃
Substrate Negative Bias
Gas Circuit System
2-way Mass Flow Controller(MFC)
Optional parts 6 station base plate heating revolution table
Removing the single substrate, The water heating platform can be replaced on the rotary table. 6 sheets of 30mm substrates can be placed simultaneously; Among the six stations, one of them is installed with heating furnace, while the rest are natural cooling substrates. Maximum temperature of substrate heating: 600℃±1℃
Computer Control System
Control sample rotation, baffle switch, target identification, etc
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