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Single chamber magnetron sputtering system

Single chamber magnetron sputtering system

    Single chamber magnetron sputtering system is mainly composed of sputtering vacuum chamber, magnetron sputtering target, substrate water-cooled heating platform, working gas path, air extraction system, vacuum measurement, electronic control system and installation machine.

Single chamber magnetron sputtering system is used for the preparation of novel thin film materials such as nanometer single-layer and multi-layer functional film, hard film, metal film, semiconductor film and dielectric film. It can be widely used in the research of thin film materials and the production of small batch. It can be widely used in universities and colleges, scientific research institutes of thin film materials preparation research and small batch.

Single chamber magnetron sputtering system specifications:

 Vacuum chamber

Circular type vacuum   chamber,

size: Ø450×350mm

Vacuum system configuration

Compound   molecular pump, mechanical pump, gate valve

ultimate pressure

6.67*10-5Pa(After baking   degassing)

Vacuum   recovery time

Up to 6. 6*10-4Pa   in 40 minutes. (the system briefly exposes the atmosphere and fills with dry   nitrogen to start pumping)

Magnetron   target component

3 sets of permanent magnetic targets; target   sizeØ60mm(one of   the targets can sputtering ferromagnetic material). The RF beach   and DC cutoff of each target are compatible; and the distance between target   and sample is adjustable from 90mm to 100mm; when direct upward sputtering,   the distance between target and samle is adjustable from 40mm to 80mm.

Water-cooling   Substrate Heating Revolution Table

Substrate   Structure

The substrate   heating and water cooling work independently, and the heating furnace can be   replaced by water cooling substrates

Sample size

Ø30mm

Mode of motion

The substrate   can rotate continuously, and the rotation speed is 5-10 RPM

Heating

Max.   Temperature 600±1

Substrate   Negative Bias

-200V

Gas Circuit   System

2-way Mass   Flow Controller(MFC)

Optional parts   6 station base plate heating revolution table

Removing the single substrate, The water   heating platform can be replaced on the rotary table. 6 sheets of 30mm   substrates can be placed simultaneously; Among the six stations, one of them   is installed with heating furnace, while the rest are natural cooling   substrates. Maximum temperature of substrate heating: 600℃±1

Computer   Control System

Control sample   rotation, baffle switch, target identification, etc

Floor Occupied

Main Set

1300×800mm2

Electrical   Cabinet

700×700mm2

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