This equipment is Two targets DC RF magnetron sputtering coater apparatus, which is for the preparation of metal thin films and un metal films

This equipment is Two targets DC RF magnetron sputtering coater apparatus, which is for the preparation of metal thin films and un metal films. It has applications in the fields of electronics, optics, and special ceramic preparation.
Features:
The 2-target magnetron sputtering coater is equipped with two 4-inch (100 mm OD) target guns. One target gun is equipped with an RF power supply for sputtering non-conductive targets, while the other target gun is equipped with an independently controlled DC power supply for coating conductive metal targets. The system can also be used for depositing multilayer conductive metal films.
Technical parameter:
TWO-target DC RF Magnetron Sputtering Coater | |
Model No. | CY-MSP500S-DCRF |
Input power supply | Single phase AC220V, 50 Hz |
Sample holder | • Dimension: φ150mm • Max. heating temperature: 500℃ • Rotation speed: 1~ 20rpm adjustable • Coating distance:50-100mm adjustable |
Magnetron sputtering gun | • Quantity: 2 sets 1RF+1DC equipped with baffle • Adjustable angle -45°~45° • Target dimension: diameter 4'', • Target thickness: max.6mm • Target plane: circular plane target • Glow vacuum:10pa~0.2Pa • Target utilization rate:about 40% |
Sputtering Vacuum Chamber | • Dimension: D500X500 • Material: 304 stainless steel • Inner wall processing: electrolytic polishing • Viewport (window): ~4'' (100mm) with shutter • Opening methods: Open from front, Target gun on top or under • Double water chiller layer |
Control | • PLC automatic control: 14.3 " touch screen • Operation interface: inch touch screen + operation interface |
Gas control system | • Two-channel mass flow monitor • For Argon, oxygen range of 0~500sccm • Precision 1% |
DC power | • Quantity: 1 set • Output power: 1000W |
RF power supply | • Quantity: 1 set • Output power: 0~500W • RF frequency: 13.56 MHz • Matching method: automatch • Reflected power: ≦100W • (After matching, the reflected power is 0) • the reflected power is 0) • Power stability: ±0.1% • Rf output connector:N model connector • Overall efficiency ≥75% • Harmonic component≦-50dBc • Type of cooling: Forced-air |
High vacuum system | Backing pump | • double-stage rotary vane pump • Pumping rate: 4.4L/s |
Molecular pump | • Pumping rate: 1200 L/s • Cooling method: water cooling • High vacuum flange: CF150 • Vacuum degree: 9.0*10-4Pa | |
Vacuum measurement | • Composite vacuum gauge 10-5Pa ~ 105Pa • Resistance gauge + ionization gauge | |
Vacuum valves | • Electronically controlled pneumatic gate valve • Electrically controlled pneumatic cut-off valve • Electrically controlled pneumatic side drain valve | |
Film thickness monitor | • Channel numbers: One channel • Measuring accuracy: 1Ã • Standard sensor quartz crystal: 6MHz • Applicable quartz crystal size: φ14mm | |
Circulating water chiller | • Temperature control range: 10 ~ 25℃ • Nominal cooling capacity: 0. 75KW • Flow rate: 10L/min • Cooling water: purified water | |
Air compressor | • Operates on three pneumatic valves • Rotating speed: 1380r/min • Flow: 40L/min • Rated discharge pressure: 0. 7Mpa | |
Operation and control system | • PLC + 14.3 " touch screen | |
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